| Specifications | |
| Product Attribute | Attribute Value |
| Manufacturer Product Number | PBSS3540M |
| Manufacturer | Nexperia |
| Category | Discrete Semiconductor Products, Transistors, Bipolar (BJT), Single Bipolar Transistors |
| Base Product Number | PBSS3540 |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 50mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 10mA, 2V |
| Power - Max | 250 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q100 |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Supplier Device Package | DFN1006B-3 |
